00000nam 2200000zi 4500 9.892675 CaOODSP 20221107173234 m o d f cr bn||||||||| 201021s1976 onca ob f000 0 eng d CaOODSP eng rda CaOODSP Co24-3/7-1298-1976E-PDF Bouchard, M., author. The structure of HCl doped silicon oxides and of the overlaying metallization / by M. Bouchard, W.A. Hartman and R.M. Kuley. Ottawa : Communications Research Centre, 1976. 1 online resource (iii, 25 pages) : illustrations. text txt rdacontent computer c rdamedia online resource cr rdacarrier CRC report ; no. 1298 Issued also in French under title: La structure des oxydes de silicium dopés au HCl et leur revêtement métallique. "Space Technology Branch." "October 1976." Digitized edition from print [produced by Innovation, Science and Economic Development Canada]. Some pages rotated in this copy. Includes bibliographical references (pages 22-23). "The addition of chlorine during processing improves the dielectric properties of silicon dioxide by reducing the concentration of mobile ions in the oxide. Since about 1973 the industry has adopted an optimum value of approximately 4 vol % HCl:O₂ because of possible detrimental effects at higher concentrations of chlorine. We have found quantitatively that at higher concentrations of chlorine (e.g. 10 vol % HCl:O₂ mixture) the oxide surface becomes irregular and the excess chlorine forms pockets within the oxide. This work characterizes these oxide defects and shows that their number, size and distribution are influenced by the chlorine concentrations, the processing sequence, the cooling rate following the oxidation, and the wafer orientation. The oxide defects also cause a local lifting of most metallizations and can cause pitting of aluminum. These reliability hazards can be avoided by careful choice of processing parameters"--Abstract, page 1. Issued also in print format. Metal oxide semiconductors. Silicon Oxidation. Silicon oxide. Hydrogen chloride. Communications Research Centre (Canada), issuing body. La structure des oxydes de silicium dopés au HCl et leur revêtement métallique / (CaOODSP)9.892677 CRC report ; no. 1298. (CaOODSP)9.882492 PDF 2.38 MB https://publications.gc.ca/collections/collection_2020/isde-ised/Co24/Co24-3-7-1298-1976-eng.pdf