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| 02784nam 2200421zi 4500 |
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| 001 | 9.892675 |
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| 003 | CaOODSP |
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| 005 | 20221107173234 |
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| 006 | m o d f |
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| 007 | cr bn||||||||| |
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| 008 | 201021s1976 onca ob f000 0 eng d |
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| 040 | |aCaOODSP|beng|erda|cCaOODSP |
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| 086 | 1 |aCo24-3/7-1298-1976E-PDF |
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| 100 | 1 |aBouchard, M., |eauthor. |
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| 245 | 14|aThe structure of HCl doped silicon oxides and of the overlaying metallization / |cby M. Bouchard, W.A. Hartman and R.M. Kuley. |
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| 264 | 1|aOttawa : |bCommunications Research Centre, |c1976. |
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| 300 | |a1 online resource (iii, 25 pages) : |billustrations. |
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| 336 | |atext|btxt|2rdacontent |
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| 337 | |acomputer|bc|2rdamedia |
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| 338 | |aonline resource|bcr|2rdacarrier |
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| 490 | 1 |aCRC report ; |vno. 1298 |
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| 500 | |aIssued also in French under title: La structure des oxydes de silicium dopés au HCl et leur revêtement métallique. |
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| 500 | |a"Space Technology Branch." |
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| 500 | |a"October 1976." |
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| 500 | |aDigitized edition from print [produced by Innovation, Science and Economic Development Canada]. |
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| 500 | |aSome pages rotated in this copy. |
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| 504 | |aIncludes bibliographical references (pages 22-23). |
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| 520 | 3 |a"The addition of chlorine during processing improves the dielectric properties of silicon dioxide by reducing the concentration of mobile ions in the oxide. Since about 1973 the industry has adopted an optimum value of approximately 4 vol % HCl:O₂ because of possible detrimental effects at higher concentrations of chlorine. We have found quantitatively that at higher concentrations of chlorine (e.g. 10 vol % HCl:O₂ mixture) the oxide surface becomes irregular and the excess chlorine forms pockets within the oxide. This work characterizes these oxide defects and shows that their number, size and distribution are influenced by the chlorine concentrations, the processing sequence, the cooling rate following the oxidation, and the wafer orientation. The oxide defects also cause a local lifting of most metallizations and can cause pitting of aluminum. These reliability hazards can be avoided by careful choice of processing parameters"--Abstract, page 1. |
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| 530 | |aIssued also in print format. |
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| 650 | 0|aMetal oxide semiconductors. |
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| 650 | 0|aSilicon|xOxidation. |
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| 650 | 0|aSilicon oxide. |
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| 650 | 0|aHydrogen chloride. |
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| 710 | 2 |aCommunications Research Centre (Canada), |eissuing body. |
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| 775 | 08|tLa structure des oxydes de silicium dopés au HCl et leur revêtement métallique / |w(CaOODSP)9.892677 |
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| 830 | #0|aCRC report ;|vno. 1298.|w(CaOODSP)9.882492 |
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| 856 | 40|qPDF|s2.38 MB|uhttps://publications.gc.ca/collections/collection_2020/isde-ised/Co24/Co24-3-7-1298-1976-eng.pdf |
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