000 02304nam  2200373zi 4500
0019.893030
003CaOODSP
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008201030e199712##oncad   o    f000 0 eng d
040 |aCaOODSP|beng|erda|cCaOODSP
041 |aeng|bfre
0861 |aCo24-3/7-97-S007E-PDF
1001 |aMcLelland, Scott R. |q(Scott Ronald), |d1972- |eauthor.
24510|a44.5 GHz PHEMT power amplifier / |cby Scott McLelland and Malcolm G. Stubbs and Gilbert A. Morin.
264 1|aOttawa : |bCommunications Research Centre, Industry Canada, |cDecember 1997.
300 |a1 online resource (ix, 38 pages) : |billustrations, graphs.
336 |atext|btxt|2rdacontent
337 |acomputer|bc|2rdamedia
338 |aonline resource|bcr|2rdacarrier
4901 |aCRC report ; |vno. 97-007
500 |a"98-03012."
500 |aDigitized edition from print [produced by Innovation, Science and Economic Development Canada].
500 |a"The work was supported by the Canadian Department of National Defence through the Chief of Research and Development under Project No. 5CA12."
5203 |a"The work described in this report represents the design phase of a gallium arsenide monolithic microwave integrated circuit (GaAs MMIC) power amplifier using pseudomorphic high electron mobility transistors (PHEMTs). The main purpose was to investigate the possible performance of a power amplifier at 44 GHz for future application in a phased array antenna system. The design of a two stage amplifier, providing over 12 dB of gain over the frequency range 43.5 - 45.5 GHz, is described along with the expected large signal performance. It is expected that the amplifier will provide over 20 dBm of output power. The final layout of the complete chip is also presented"--Abstract, page iii.
546 |aIncludes abstract in French.
650 0|aPower amplifiers.
650 6|aAmplificateurs de puissance.
7101 |aCanada. |bIndustry Canada, |eissuing body.
7102 |aCommunications Research Centre (Canada), |eissuing body.
830#0|aCRC report ;|vno. 97-007.|w(CaOODSP)9.882492
85640|qPDF|s2.93 MB|uhttps://publications.gc.ca/collections/collection_2020/isde-ised/Co24/Co24-3-7-97-S007-eng.pdf