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040 |aCaOODSP|beng|erda|cCaOODSP
043 |an-cn---
0861 |aDR52-17/5-1972E-PDF
1001 |aJohnson, F. A. |q(F. Allan)|eauthor.
24512|aA general survey of transient-radiation effects on electronics (tree), with particular reference to semiconductor devices / |cby F.A. Johnson.
264 1|aOttawa : |bDefence Research Establishment Ottawa, |cApril 1972.
300 |a1 online resource (52, 2 pages).
336 |atext|btxt|2rdacontent
337 |acomputer|bc|2rdamedia
338 |aonline resource|bcr|2rdacarrier
4901 |aDREO report ; |v656
500 |aDigitized edition from print [produced by Defence Research and Development Canada].
504 |aIncludes bibliographical references (pages 40-52).
520 |a"The basic effects produced in semiconductors by both ionizing and displacement radiation are summarized and related to the parameter changes which are observed in semiconductor devices. Ionization and displacement effects produced by transient radiation in diodes, transistors, four-layer devices and integrated circuits are described, and a brief summary is given of the effects of radiation on miscellaneous components such as resistors, capacitors and coaxial cables. Various techniques for radiation hardening of semiconductor devices and circuits are reviewed, and methods for predicting the effects of radiation are discussed briefly"--Abstract.
546 |aIncludes abstracts in English and French.
650 0|aSemiconductors|xEffect of radiation on.
650 0|aSemiconductors|xExperiments.
650 0|aRadiation hardening|xExperiments.
650 0|aIonizing radiation|xExperiments.
650 6|aSemi-conducteurs|xEffets du rayonnement sur.
650 6|aSemi-conducteurs|xExpériences.
650 6|aInsensibilité aux radiations|xExpériences.
650 6|aRayonnement ionisant|xExpériences.
7102 |aDefence Research Establishment Ottawa, |eissuing body.
7101 |aCanada. |bDefence Research Board, |eissuing body.
830#0|aDREO report ;|v656.|w(CaOODSP)9.941661
85640|qPDF|s3.56 MB|uhttps://publications.gc.ca/collections/collection_2024/rddc-drdc/DR52-17-5-1972-eng.pdf