000	02148cam  2200349zi 4500
001	9.879914
003	CaOODSP
005	20221107165638
006	m     o  d f
007	cr cn|||||||||
008	190930t20132013quca    ob   f000 0 eng d
040	|aCaOODSP|beng|erda|cCaOODSP
041	0 |aeng|beng|bfre
086	1 |aD68-6/270-2013E-PDF
100	1 |aParadis, Suzanne, |eauthor.
245	10|aCharacterization and optimization of SiO2 and Si3N4 thin films : |bfor a smart uncooled IR sensor / |cSuzanne Paradis, DRDC Valcartier ; Jean-Baptiste A. Keptsu, Plasmionique Inc.
264	1|aQuebec (Quebec) : |bDefence R&D Canada - Valcartier, |c2013.
264	4|c©2013
300	|a1 online resource (viii, 32 pages, 2 unnumbered pages) : |bcolour illustrations.
336	|atext|btxt|2rdacontent
337	|acomputer|bc|2rdamedia
338	|aonline resource|bcr|2rdacarrier
490	1 |aTechnical memorandum ; |vDRDC Valcartier TM 2012-270
500	|a"February 2013."
504	|aIncludes bibliographical references (pages 24-25).
520	3 |a"This document reports on the characterization and optimization of two thin films, namely silicon oxide and silicon nitride, that are used in the fabrication of the smart uncooled IR sensor with wavelength selectivity. These thin films play an important role in the stack of films forming the sensor. In the course of the fabrication of the sensor, the films were found not to be optimized to play their function. Their stoichiometry and physical properties such as density, absorptance, optical constants, and residual stress were characterized and optimized with a view to maximizing the performance of the optical device"--Abstract, page i.
546	|aIncludes abstracts and summaries in English and French.
700	1 |aKeptsu, Jean-Baptiste A., |eauthor.
710	1 |aCanada. |bDefence R&D Canada.
710	2 |aDefence R&D Canada - Valcartier.
830	#0|aTechnical memorandum (Defence R&D Canada)|vDRDC Valcartier TM 2012-270.|w(CaOODSP)9.820564
856	40|qPDF|s1.28 MB|uhttps://publications.gc.ca/collections/collection_2019/rddc-drdc/D68-6-270-2013-eng.pdf