00000nam 2200000zi 4500 9.893083 CaOODSP 20221107173341 m o d f cr bn||||||||| 201030e197306##onca ob f000 0 eng d CaOODSP eng rda CaOODSP n-cn--- Co24-3/7-1246-1973E-PDF Hum, R. H., author. Effect of laser-induced thermal pulses on the threshold voltage of mosfets / by R.H. Hum, A.L. Barry. Ottawa : Communications Research Centre, Department of Communications, June 1973. 1 online resource (iii, 5 pages) : figures. text txt rdacontent computer c rdamedia online resource cr rdacarrier CRC report ; no. 1246 Digitized edition from print [produced by Innovation, Science and Economic Development Canada]. Includes bibliographical references (page 4). "The short-term effect of a submillisecond laser pulse on the threshold voltage of metal-oxide-semiconductor field effect transistors was investigated, with negative results. This resolves a minor controversy over a paper presented at a recent radiation-effects conference. A novel method of measuring transient shifts in threshold voltage was developed"--Abstract, page 1. Metal oxide semiconductor field-effect transistors. Voltage regulators. Thermally stimulated currents. Laser pulses, Ultrashort. Transistors MOSFET. Régulateurs de tension. Courants électriques. Impulsions laser ultra-brèves. Communications Research Centre (Canada), issuing body. CRC report ; no. 1246. (CaOODSP)9.882492 PDF 683 KB https://publications.gc.ca/collections/collection_2020/isde-ised/Co24/Co24-3-7-1246-1973-eng.pdf