000	00000nam 2200000zi 4500
001	9.893083
003	CaOODSP
005	20221107173341
006	m     o  d f
007	cr bn|||||||||
008	201030e197306##onca    ob   f000 0 eng d
040	|aCaOODSP|beng|erda|cCaOODSP
043	|an-cn---
086	1 |aCo24-3/7-1246-1973E-PDF
100	1 |aHum, R. H., |eauthor.
245	10|aEffect of laser-induced thermal pulses on the threshold voltage of mosfets / |cby R.H. Hum, A.L. Barry.
264	1|aOttawa : |bCommunications Research Centre, Department of Communications, |cJune 1973.
300	|a1 online resource (iii, 5 pages) : |bfigures.
336	|atext|btxt|2rdacontent
337	|acomputer|bc|2rdamedia
338	|aonline resource|bcr|2rdacarrier
490	1 |aCRC report ; |vno. 1246
500	|aDigitized edition from print [produced by Innovation, Science and Economic Development Canada].
504	|aIncludes bibliographical references (page 4).
520	3 |a"The short-term effect of a submillisecond laser pulse on the threshold voltage of metal-oxide-semiconductor field effect transistors was investigated, with negative results. This resolves a minor controversy over a paper presented at a recent radiation-effects conference. A novel method of measuring transient shifts in threshold voltage was developed"--Abstract, page 1.
650	0|aMetal oxide semiconductor field-effect transistors.
650	0|aVoltage regulators.
650	0|aThermally stimulated currents.
650	0|aLaser pulses, Ultrashort.
650	6|aTransistors MOSFET.
650	6|aRégulateurs de tension.
650	6|aCourants électriques.
650	6|aImpulsions laser ultra-brèves.
710	2 |aCommunications Research Centre (Canada), |eissuing body.
830	#0|aCRC report ;|vno. 1246.|w(CaOODSP)9.882492
856	40|qPDF|s683 KB|uhttps://publications.gc.ca/collections/collection_2020/isde-ised/Co24/Co24-3-7-1246-1973-eng.pdf