000	02110cam  2200385zi 4500
001	9.895227
003	CaOODSP
005	20221107173952
006	m     o  d f
007	cr bn|||||||||
008	210112e199011##oncad   obt  f000 0 eng d
040	|aCaOODSP|beng|erda|cCaOODSP
041	|aeng|bfre
086	1 |aCo24-3/7-1433-1990E-PDF
100	1 |aClarke, B., |eauthor.
245	12|aA 19.2 GHz cooled HEMT low noise amplifier / |cby B. Clarke, J. Bradley and M. Cuhaci.
264	1|aOttawa : |bCommunications Research Centre, |cNovember 1990.
300	|a1 online resource (vii, 52 pages) : |billustrations, graphs.
336	|atext|btxt|2rdacontent
337	|acomputer|bc|2rdamedia
338	|aonline resource|bcr|2rdacarrier
490	1 |aCRC report ; |vno. 1433
500	|aDigitized edition from print [produced by Innovation, Science and Economic Development Canada].
500	|a"Communications Devices and Components Branch."
504	|aIncludes bibliographical references (page 52).
520	|a"A 19.2 GHz cooled low-noise amplifier was developed for a ground terminal application utilizing HEMTs and quartz substrate in a conventional microstrip format. Cooling was provided with thermoelectric devices and a 1.98 dB noise figure and 15 dB associated gain were achieved at 19.2 GHz. The noise figure over the 18.85 to 19.55 GHz frequency band was under 2.2 dB. Two approaches were implemented. Part I describes the "conventional" approach where the entire LNA module was cooled, while Part II describes the "novel" approach where only the HEMT chips were cooled"--Abstract, page iii.
546	|aIncludes abstract in French.
650	0|aAmplifiers (Electronics)
650	0|aModulation-doped field-effect transistors.
650	6|aAmplificateurs.
650	6|aTransistors HEMT.
710	2 |aCommunications Research Centre (Canada), |eissuing body.
830	#0|aCRC report ;|vno. 1433.|w(CaOODSP)9.882492
856	40|qPDF|s4.64 MB|uhttps://publications.gc.ca/collections/collection_2021/isde-ised/co24/Co24-3-7-1433-1990-eng.pdf