00000nam 2200000zi 4500 9.941857 CaOODSP 20241017155152 m o d f cr mn||||||||| 240814e197204##onc ob f000 0 eng d CaOODSP eng rda CaOODSP n-cn--- DR52-17/5-1972E-PDF Johnson, F. A. (F. Allan) author. A general survey of transient-radiation effects on electronics (tree), with particular reference to semiconductor devices / by F.A. Johnson. Ottawa : Defence Research Establishment Ottawa, April 1972. 1 online resource (52, 2 pages). text txt rdacontent computer c rdamedia online resource cr rdacarrier DREO report ; 656 Digitized edition from print [produced by Defence Research and Development Canada]. Includes bibliographical references (pages 40-52). "The basic effects produced in semiconductors by both ionizing and displacement radiation are summarized and related to the parameter changes which are observed in semiconductor devices. Ionization and displacement effects produced by transient radiation in diodes, transistors, four-layer devices and integrated circuits are described, and a brief summary is given of the effects of radiation on miscellaneous components such as resistors, capacitors and coaxial cables. Various techniques for radiation hardening of semiconductor devices and circuits are reviewed, and methods for predicting the effects of radiation are discussed briefly"--Abstract. Includes abstracts in English and French. Semiconductors Effect of radiation on. Semiconductors Experiments. Radiation hardening Experiments. Ionizing radiation Experiments. Semi-conducteurs Effets du rayonnement sur. Semi-conducteurs Expériences. Insensibilité aux radiations Expériences. Rayonnement ionisant Expériences. Defence Research Establishment Ottawa, issuing body. Canada. Defence Research Board, issuing body. DREO report ; 656. (CaOODSP)9.941661 PDF 3.56 MB https://publications.gc.ca/collections/collection_2024/rddc-drdc/DR52-17-5-1972-eng.pdf 72-189