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44.5 GHz PHEMT power amplifier / by Scott McLelland and Malcolm G. Stubbs and Gilbert A. Morin.: Co24-3/7-97-S007E-PDF

"The work described in this report represents the design phase of a gallium arsenide monolithic microwave integrated circuit (GaAs MMIC) power amplifier using pseudomorphic high electron mobility transistors (PHEMTs). The main purpose was to investigate the possible performance of a power amplifier at 44 GHz for future application in a phased array antenna system. The design of a two stage amplifier, providing over 12 dB of gain over the frequency range 43.5 - 45.5 GHz, is described along with the expected large signal performance. It is expected that the amplifier will provide over 20 dBm of output power. The final layout of the complete chip is also presented"--Abstract, page iii.

Permanent link to this Catalogue record:
publications.gc.ca/pub?id=9.893030&sl=0

Publication information
Department/Agency
  • Canada. Industry Canada, issuing body.
  • Communications Research Centre (Canada), issuing body.
Title44.5 GHz PHEMT power amplifier / by Scott McLelland and Malcolm G. Stubbs and Gilbert A. Morin.
Series title
  • CRC report ; no. 97-007
Publication typeMonograph - View Master Record
Language[English]
FormatDigital text
Electronic document
Note(s)
  • "98-03012."
  • Digitized edition from print [produced by Innovation, Science and Economic Development Canada].
  • "The work was supported by the Canadian Department of National Defence through the Chief of Research and Development under Project No. 5CA12."
  • Includes abstract in French.
Publishing information
  • Ottawa : Communications Research Centre, Industry Canada, December 1997.
Author / Contributor
  • McLelland, Scott R. (Scott Ronald), 1972- author.
Description1 online resource (ix, 38 pages) : illustrations, graphs.
Catalogue number
  • Co24-3/7-97-S007E-PDF
Subject terms
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