Effect of laser-induced thermal pulses on the threshold voltage of mosfets / by R.H. Hum, A.L. Barry.: Co24-3/7-1246-1973E-PDF
"The short-term effect of a submillisecond laser pulse on the threshold voltage of metal-oxide-semiconductor field effect transistors was investigated, with negative results. This resolves a minor controversy over a paper presented at a recent radiation-effects conference. A novel method of measuring transient shifts in threshold voltage was developed"--Abstract, page 1.
Permanent link to this Catalogue record:
publications.gc.ca/pub?id=9.893083&sl=0
| Department/Agency | Communications Research Centre (Canada), issuing body. |
|---|---|
| Title | Effect of laser-induced thermal pulses on the threshold voltage of mosfets / by R.H. Hum, A.L. Barry. |
| Series title | CRC report ; no. 1246 |
| Publication type | Series - View Master Record |
| Language | [English] |
| Format | Electronic |
| Electronic document | |
| Note(s) | Digitized edition from print [produced by Innovation, Science and Economic Development Canada]. Includes bibliographical references (page 4). |
| Publishing information | Ottawa : Communications Research Centre, Department of Communications, June 1973. |
| Author / Contributor | Hum, R. H., author. |
| Description | 1 online resource (iii, 5 pages) : figures. |
| Catalogue number |
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| Subject terms | Metal oxide semiconductor field-effect transistors. Voltage regulators. Thermally stimulated currents. Laser pulses, Ultrashort. Transistors MOSFET. Régulateurs de tension. Courants électriques. Impulsions laser ultra-brèves. |
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