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Effect of laser-induced thermal pulses on the threshold voltage of mosfets / by R.H. Hum, A.L. Barry.: Co24-3/7-1246-1973E-PDF

"The short-term effect of a submillisecond laser pulse on the threshold voltage of metal-oxide-semiconductor field effect transistors was investigated, with negative results. This resolves a minor controversy over a paper presented at a recent radiation-effects conference. A novel method of measuring transient shifts in threshold voltage was developed"--Abstract, page 1.

Permanent link to this Catalogue record:
publications.gc.ca/pub?id=9.893083&sl=0

Publication information
Department/Agency
  • Communications Research Centre (Canada), issuing body.
TitleEffect of laser-induced thermal pulses on the threshold voltage of mosfets / by R.H. Hum, A.L. Barry.
Series title
  • CRC report ; no. 1246
Publication typeMonograph - View Master Record
Language[English]
FormatDigital text
Electronic document
Note(s)
  • Digitized edition from print [produced by Innovation, Science and Economic Development Canada].
  • Includes bibliographical references (page 4).
Publishing information
  • Ottawa : Communications Research Centre, Department of Communications, June 1973.
Author / Contributor
  • Hum, R. H., author.
Description1 online resource (iii, 5 pages) : figures.
Catalogue number
  • Co24-3/7-1246-1973E-PDF
Subject terms
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