A 19.2 GHz cooled HEMT low noise amplifier / by B. Clarke, J. Bradley and M. Cuhaci. : Co24-3/7-1433-1990E-PDF

"A 19.2 GHz cooled low-noise amplifier was developed for a ground terminal application utilizing HEMTs and quartz substrate in a conventional microstrip format. Cooling was provided with thermoelectric devices and a 1.98 dB noise figure and 15 dB associated gain were achieved at 19.2 GHz. The noise figure over the 18.85 to 19.55 GHz frequency band was under 2.2 dB. Two approaches were implemented. Part I describes the "conventional" approach where the entire LNA module was cooled, while Part II describes the "novel" approach where only the HEMT chips were cooled"--Abstract, page iii.

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Renseignements sur la publication
Ministère/Organisme Communications Research Centre (Canada), issuing body.
Titre A 19.2 GHz cooled HEMT low noise amplifier / by B. Clarke, J. Bradley and M. Cuhaci.
Titre de la série CRC report ; no. 1433
Type de publication Série - Voir l'enregistrement principal
Langue [Anglais]
Format Électronique
Document électronique
Note(s) Digitized edition from print [produced by Innovation, Science and Economic Development Canada].
"Communications Devices and Components Branch."
Includes bibliographical references (page 52).
Includes abstract in French.
Information sur la publication Ottawa : Communications Research Centre, November 1990.
Auteur / Contributeur Clarke, B., author.
Description 1 online resource (vii, 52 pages) : illustrations, graphs.
Numéro de catalogue
  • Co24-3/7-1433-1990E-PDF
Descripteurs Amplifiers (Electronics)
Modulation-doped field-effect transistors.
Amplificateurs.
Transistors HEMT.
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