A 19.2 GHz cooled HEMT low noise amplifier / by B. Clarke, J. Bradley and M. Cuhaci.: Co24-3/7-1433-1990E-PDF
"A 19.2 GHz cooled low-noise amplifier was developed for a ground terminal application utilizing HEMTs and quartz substrate in a conventional microstrip format. Cooling was provided with thermoelectric devices and a 1.98 dB noise figure and 15 dB associated gain were achieved at 19.2 GHz. The noise figure over the 18.85 to 19.55 GHz frequency band was under 2.2 dB. Two approaches were implemented. Part I describes the "conventional" approach where the entire LNA module was cooled, while Part II describes the "novel" approach where only the HEMT chips were cooled"--Abstract, page iii.
Permanent link to this Catalogue record:
publications.gc.ca/pub?id=9.895227&sl=0
| Department/Agency | Communications Research Centre (Canada), issuing body. |
|---|---|
| Title | A 19.2 GHz cooled HEMT low noise amplifier / by B. Clarke, J. Bradley and M. Cuhaci. |
| Series title | CRC report ; no. 1433 |
| Publication type | Series - View Master Record |
| Language | [English] |
| Format | Electronic |
| Electronic document | |
| Note(s) | Digitized edition from print [produced by Innovation, Science and Economic Development Canada]. "Communications Devices and Components Branch." Includes bibliographical references (page 52). Includes abstract in French. |
| Publishing information | Ottawa : Communications Research Centre, November 1990. |
| Author / Contributor | Clarke, B., author. |
| Description | 1 online resource (vii, 52 pages) : illustrations, graphs. |
| Catalogue number |
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| Subject terms | Amplifiers (Electronics) Modulation-doped field-effect transistors. Amplificateurs. Transistors HEMT. |