Characterization and optimization of SiO2 and Si3N4 thin films : for a smart uncooled IR sensor / Suzanne Paradis, DRDC Valcartier ; Jean-Baptiste A. Keptsu, Plasmionique Inc. : D68-6/270-2013E-PDF
"This document reports on the characterization and optimization of two thin films, namely silicon oxide and silicon nitride, that are used in the fabrication of the smart uncooled IR sensor with wavelength selectivity. These thin films play an important role in the stack of films forming the sensor. In the course of the fabrication of the sensor, the films were found not to be optimized to play their function. Their stoichiometry and physical properties such as density, absorptance, optical constants, and residual stress were characterized and optimized with a view to maximizing the performance of the optical device"--Abstract, page i.
Lien permanent pour cette publication :
publications.gc.ca/pub?id=9.879914&sl=1
| Ministère/Organisme | Canada. Defence R&D Canada. Defence R&D Canada - Valcartier. |
|---|---|
| Titre | Characterization and optimization of SiO2 and Si3N4 thin films : for a smart uncooled IR sensor / Suzanne Paradis, DRDC Valcartier ; Jean-Baptiste A. Keptsu, Plasmionique Inc. |
| Titre de la série | Technical memorandum ; DRDC Valcartier TM 2012-270 |
| Type de publication | Série - Voir l'enregistrement principal |
| Langue | [Anglais] |
| Format | Électronique |
| Document électronique | |
| Note(s) | "February 2013." Includes bibliographical references (pages 24-25). Includes abstracts and summaries in English and French. |
| Information sur la publication | Quebec (Quebec) : Defence R&D Canada - Valcartier, 2013. ©2013 |
| Auteur / Contributeur | Paradis, Suzanne, author. Keptsu, Jean-Baptiste A., author. |
| Description | 1 online resource (viii, 32 pages, 2 unnumbered pages) : colour illustrations. |
| Numéro de catalogue |
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